IRF5305PBF International Rectifier, IRF5305PBF Datasheet

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... T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA IRF5305PbF HEXFET Max. @ -10V GS @ -10V GS -110 0.71 -5.0 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ...

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... IRF5305PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

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... Fig 3. Typical Transfer Characteristics www.irf.com 1000 TOP BOTTOM - 4.5V 100 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -25V 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5305PbF VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V -4.5V 20µs PULSE WIDTH T = 175° Drain-to-Source Voltage ( -27A V = -10V 100 120 140 160 180 T , Junction Temperature (° ...

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... IRF5305PbF 2500 1MHz iss rss oss ds gd 2000 C iss C oss 1500 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175° 25° 0.4 0.8 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage -16A D SHORTED ...

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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V GS 10% 125 150 175 ° 90 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRF5305PbF D.U. -10V d(on) r ...

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... IRF5305PbF D.U DRIVER -20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 6 700 - V DD 600 + A 500 400 300 15V 200 100 Starting T , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy ...

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... Duty Factor "D" SD • D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5.0V for Logic Level and 3V Drive Devices GS Fig 14. For P-Channel HEXFETS IRF5305PbF + + P.W. Period [ ] *** V =10V ...

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... IRF5305PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...