IRF630NLPBF International Rectifier, IRF630NLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF630NLPBF
• Description: MOSFET N-CH 200V 9.3A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF630NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 82W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 82 W
• Mounting Style: Through Hole
• Gate Charge Qg: 23.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF630NLPBF

IRF630N/S/LPbF
www.irf.com
100
1200
1000
0.1
800
600
400
200
10
1
0
0.2
1
T = 175 C
V
J
Coss
Crss
Ciss
SD
0.4
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
0.6
0.8
f = 1 MHZ
100
T = 25 C
J
V
1.0
GS
°
= 0 V
1000
1.2
1000
100
0.1
10
1
16
12
1
8
4
0
T
T
Single Pulse
0
C
J
I =
D
= 25 C °
= 175 C
OPERATION IN THIS AREA LIMITED
V
5.4A
DS
5
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
10
BY R
V
V
V
DS(on)
15
DS
DS
DS
= 160V
= 100V
= 40V
100
20
10us
100us
1ms
10ms
25
4
1000
30