IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 5

• Manufacturer Part Number: IRF7832TR
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7832TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.32V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4310pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
24
20
16
12
100
0.1
8
4
0
10
1
1E-006
25
Fig 9. Maximum Drain Current Vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T C , Case Temperature (°C)
Case Temperature
1E-005
75
SINGLE PULSE
( THERMAL RESPONSE )
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
Fig 10. Threshold Voltage Vs. Temperature
2.5
2.0
1.5
1.0
0.5
-60 -40 -20
0.1
I D = 250µA
0
T J , Temperature (°C)
20
1
40
60
IRF7832
80 100 120 140 160
10
5
100