IRLU3636PBF International Rectifier, IRLU3636PBF Datasheet - Page 2

• Manufacturer Part Number: IRLU3636PBF
• Description: MOSFET N-CH 60V 50A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3636PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Power - Max: 143W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 99 A
• Power Dissipation: 143 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U3636PbF
Notes:

‚
ƒ
„
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
DS(on)
GS(th)
G(int)
iss
oss
rss
oss
oss
SD
some lead mounting arrangements.
g
gs
gd
sync
rr
limitation arising from heating of the device leds may occur with
Calcuted continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
Symbol
Symbol
Symbol
temperature.
I
temperature Bond wire current limit is 50A. Note that current
R
(BR)DSS
SD
above this value .
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 50A, di/dt ≤ 1109 A/µs, V
= 25Ω, I
/∆T
J
AS
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 50A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.136 mH
Ãd
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
g
J
- Q
≤ 175°C.
gd
)
h
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
…
†
‡
ˆ
‰
1.0
60
31
recommended footprint and soldering techniquea refer to applocation
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For
C
as C
C
note # AN- 994 echniques refer to application note #AN-994.
oss
θ
oss
oss
3779
0.07
–––
–––
–––
–––
–––
–––
–––
216
332
163
437
636
–––
–––
–––
eff. (TR) is a fixed capacitance that gives the same charging time
oss
5.4
6.6
0.6
2.1
eff. (ER) is a fixed capacitance that gives the same energy as
while V
33
11
15
18
45
43
69
27
32
31
43
while V
99
-100
DS
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
396
–––
–––
–––
–––
–––
6.8
8.3
2.5
1.3
20
49
is rising from 0 to 80% V
™
DS
is rising from 0 to 80% V
V/°C
mΩ
µA
nA
nC
pF
nC
ns
ns
Ω
S
A
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 50A
= 50A, V
= 50A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 7.5 Ω
= V
= 60V, V
= 60V, V
= 25V, I
= 30V
= 50V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 39V
= 4.5V
= 0V
= 0V, V
= 0V, V
GS
, I
D
DS
g
g
D
S
DS
DS
DSS
D
D
= 250µA
D
GS
GS
= 50A, V
= 100µA
= 50A
= 50A
=0V, V
= 0V to 48V
= 0V to 48V
= 50A
DSS
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
.
F
R
= 50A
D
g
GS
= 51V,
g
GS
= 5mA
J
= 4.5V
= 125°C
= 0V
h
www.irf.com
G
d
,See Fig.11
g
g
S
D