IRF3007SPBF International Rectifier, IRF3007SPBF Datasheet

IRF3007SPBF

Manufacturer Part Number

IRF3007SPBF

Description

MOSFET N-CH 75V 62A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF3007SPBF.pdf (11 pages)

Specifications of IRF3007SPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

12.6 mOhm @ 48A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

62A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

3270pF @ 25V

Power - Max

120W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

62A

Drain Source Voltage Vds

75V

On Resistance Rds(on)

12.6mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

12.6 m Ohms

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

62 A

Power Dissipation

120 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

49 ns

Gate Charge Qg

89 nC

Minimum Operating Temperature

- 55 C

Rise Time

80 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF3007SPBF

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Absolute Maximum Ratings

Thermal Resistance

** This is applied to D

This design of HEXFET

the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating. These combine

to make this design an extremely efficient and reliable

device for use in a wide variety of applications.

Features

Description

Typical Applications

www.irf.com

STG

θJC

θJA

@ T

For recommended footprint and soldering techniques refer to application note #AN-994.

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Industrial Motor Drive

(6 sigma)

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy†

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mounted,steady state)**

Single Pulse Avalanche Energy Tested Value‡

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

Power MOSFETs utilizes

Parameter

@ 10V

Typ.

IRF3007SPbF

–––

IRF3007LPbF

HEXFET

IRF3007SPbF

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

-55 to + 175

Pak

Max.

± 20

290

320

120

946

0.8

DS(on)

Power MOSFET

Max.

1.25

DSS

IRF3007LPbF

= 62A

= 0.0126Ω

PD - 95494A

TO-262

= 75V

Units

W/°C

°C/W

°C

Related parts for IRF3007SPBF

IRF3007SPBF Summary of contents

Page 1

... Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF3007SPbF IRF3007LPbF HEXFET IRF3007SPbF @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ. ––– ––– ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C ...

Page 4

0V MHZ C iss = SHORTED 5000 C rss = oss = 4000 Ciss 3000 2000 1000 ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 T OP Single Pulse BOTT OM 50% Duty Cycle 48A 200 100 0 25 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASSE MB LED ON WW 02, 2000 IN THE AS SEMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 10

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 EMBLY LINE "C" Note: "P" in ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

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