IRF7811W International Rectifier, IRF7811W Datasheet - Page 4

• Manufacturer Part Number: IRF7811W
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7811W

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 5V
• Input Capacitance (ciss) @ Vds: 2335pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7811W; Q1057779

IRF7811W
www.irf.com
100
100
0.1
0.1
10
0.00001
10
Fig 5. Typical Transfer Characteristics
1
1
2.5
D = 0.50
T = 150 C
J
0.20
0.10
0.05
0.02
0.01
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
3.0
GS
°
, Gate-to-Source Voltage (V)
T = 25 C
J
(THERMAL RESPONSE)
0.0001
3.5
SINGLE PULSE
°
V
20µs PULSE WIDTH
4.0
DS
= 15V
0.001
4.5
t , Rectangular Pulse Duration (sec)
1
5.0
0.01
100
0.1
10
1
0.4
Fig 6. Typical Source-Drain Diode
T = 150 C
J
V
1. Duty factor D = t / t
2. Peak T = P
SD
Notes:
0.1
0.6
,Source-to-Drain Voltage (V)
°
Forward Voltage
J
DM
0.8
x Z
1
T = 25 C
thJA
J
P
2
1
DM
+ T
A
°
t
1
1.0
V
t
2
GS
= 0 V
4
1.2
10