IRFB5620PBF International Rectifier, IRFB5620PBF Datasheet
IRFB5620PBF
Specifications of IRFB5620PBF
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IRFB5620PBF Summary of contents
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... Notes through are on page 2 www.irf.com typ. @ 10V DS(ON) Q typ typ typ. G(int) T max Gate Parameter @ 10V GS @ 10V Parameter f f IRFB5620PbF Key Parameters 200 9.8 nC Ω 2.6 175 ° TO-220AB D S Drain Source Max. Units 200 V ± 100 144 ...
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Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...
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VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...
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175° 25° 1.0 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...
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25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche ...
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D.U.T + • • - • + • G • • SD • Fig 16. HEXFET 15V DRIVER D.U 20V 0.01 Ω Fig 17a. Unclamped ...
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TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications ...