IXTQ450P2 IXYS, IXTQ450P2 Datasheet
IXTQ450P2
Manufacturer Part Number
IXTQ450P2
Description
MOSFET N-CH 500V 16A TO3P
Manufacturer
IXYS
Series
PolarP2™r
Type
PolarP2 Power MOSFETr
Datasheet
1.IXTQ450P2.pdf
(2 pages)
Specifications of IXTQ450P2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
330 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2530pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Product
MOSFET Gate Drivers
Rise Time
10 ns
Fall Time
9 ns
Supply Current
16 A
Maximum Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
44 ns
Maximum Turn-on Delay Time
16 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
16 A
Output Voltage
500 V
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.33
Ciss, Typ, (pf)
2280
Qg, Typ, (nc)
43
Trr, Typ, (ns)
400
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP2
Power MOSFET
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
T
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
TO-220
TO-3P
TO-247
Test Conditions
V
V
V
V
V
TM
S
C
J
J
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTQ450P2
IXTH450P2
IXTP450P2
Min.
Characteristic Values
500
2.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
± 30
± 40
Typ.
500
500
750
300
150
300
260
5.5
6.0
3.0
16
35
16
10
± 100 nA
Max.
Nm/lb.in.
330 mΩ
4.5
25 μA
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
G = Gate
S = Source
Features
Advantages
Applications
V
I
R
t
TO-220AB (IXTP)
TO-3P (IXTQ)
TO-247(IXTH)
D25
rr(typ)
Avalanche Rated
Fast Intrinsic Diode
Dynamic dv/dt Rated
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D
G
G
S
D
D S
= 500V
= 16A
≤ ≤ ≤ ≤ ≤ 330mΩ Ω Ω Ω Ω
= 400ns
S
Tab = Drain
D
= Drain
Tab
Tab
Tab
DS100241(02/10)
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IXTQ450P2 Summary of contents
Page 1
... GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 750 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 3.0 5.5 6 ...
Page 2
... D25 0.5 • DSS D D25 12 0.50 0.25 Characteristic Values Min. Typ. JM 400 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP450P2 IXTQ450P2 TO-3P (IXTQ) Outline Max 0.42 °C/W °C/W °C/W Max TO-247 (IXTH) Outline Terminals Gate 3 - Source Dim ...