IRL1404LPBF International Rectifier, IRL1404LPBF Datasheet - Page 3

MOSFET N-CH 40V 160A TO-262

IRL1404LPBF

Manufacturer Part Number
IRL1404LPBF
Description
MOSFET N-CH 40V 160A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1404LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 95A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 5V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
3.8 W
Mounting Style
Through Hole
Gate Charge Qg
93.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL1404LPBF
www.irf.com
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
4.0
0.1

TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
GS

T = 25 C
5.0
, Drain-to-Source Voltage (V)
J
, Gate-to-Source Voltage (V)
1
°
6.0
4.3V

T = 175 C


J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
= 15V
10
°
7.0
°
8.0
100
1000
100
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
10
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0

TOP
BOTTOM

I =
D
160A
V
DS
IRL1404S/LPbF
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.3V

20µs PULSE WIDTH
T = 175 C
J
10

°
V
°
GS
=
10V
3
100

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