IXTQ180N10T IXYS, IXTQ180N10T Datasheet - Page 5

• Manufacturer Part Number: IXTQ180N10T
• Description: MOSFET N-CH 100V 180A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ180N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0064
• Ciss, Typ, (pf): 6900
• Qg, Typ, (nc): 151
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
180
160
140
120
100
38
37
36
35
34
33
32
31
30
70
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
0
25
25
4
t
R
V
t
T
V
f
Switching Times vs. Gate Resistance
r
J
G
DS
DS
Switching Times vs. Drain Current
35
I
= 125ºC, V
= 3.3 Ω , V
D
6
= 50V
= 50V
Rise Time vs. Junction Temperature
= 25A
30
Fig. 17. Resistive Turn-off
45
Fig. 15. Resistive Turn-on
t
t
d(off)
d(on)
8
Fig. 13. Resistive Turn-on
GS
GS
- - - -
55
= 10V
T
- - - -
I
I
= 10V
D
D
J
10
R
35
= 50A
- Degrees Centigrade
- Amperes
G
- Ohms
65
12
I
D
= 50A
75
40
14
T
T
J
J
85
= 125ºC
= 25ºC
16
45
95
I
D
R
V
V
= 25A
18
G
GS
DS
105
= 3.3 Ω
= 50V
= 10V
50
20
115
64
61
58
55
52
49
46
43
40
75
70
65
60
55
50
45
40
35
30
125
160
140
120
100
38
37
36
35
34
33
32
31
30
80
60
40
20
70
65
60
55
50
45
40
35
30
25
20
15
10
25
2
Switching Times vs. Junction Temperature
24
t
R
V
f
G
DS
Switching Times vs. Gate Resistance
35
t
T
V
R
V
V
= 3.3 Ω , V
26
f
J
DS
4
= 50V
G
GS
DS
= 125ºC, V
= 3.3 Ω
= 50V
= 50V
= 10V
28
45
25A < I
t
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
d(off)
6
T
Rise Time vs. Drain Current
J
GS
t
30
I
d(off)
Fig. 14. Resistive Turn-on
- - - -
55
- Degrees Centigrade
D
D
= 10V
GS
= 25A, 50A
8
< 50A
32
- - - -
R
= 10V
65
G
I
10
- Ohms
D
34
- Amperes
75
25A < I
36
12
85
38
IXYS REF:T_180N10T (61) 11-20-06-A.xls
D
I
D
14
T
T
< 50A
= 25A, 50A
J
J
IXTQ180N10T
IXTH180N10T
95
40
= 25ºC
= 125ºC
16
42
105
44
18
115 125
46
20
250
220
190
160
130
100
70
40
48
64
61
58
55
52
49
46
43
40
50