IRF2903ZPBF International Rectifier, IRF2903ZPBF Datasheet

MOSFET N-CH 30V 75A TO-220AB

IRF2903ZPBF

Manufacturer Part Number
IRF2903ZPBF
Description
MOSFET N-CH 30V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF2903ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
6320pF @ 25V
Power - Max
290W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
260 A
Gate Charge, Total
160 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
290 W
Resistance, Drain To Source On
2.4 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
48 ns
Time, Turn-on Delay
24 ns
Transconductance, Forward
120 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
260 A
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Description
l
l
l
l
l
l
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Features
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
CS
JA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Ã
ij
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
i
(Silicon Limited)
(Silicon Limited)
(Package Limited)
h
Gate
G
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
IRF2903ZPbF
D
10 lbf
TO-220AB
-55 to + 175
S
D
Drain
y
Max.
1020
in (1.1N
D
± 20
260
180
290
290
820
2.0
75
®
G
IRF2903ZPbF
R
D
Power MOSFET
y
S
DS(on)
m)
Max.
V
0.51
–––
62
DSS
I
D
= 75A
PD -96097A
Source
= 2.4m
= 30V
S
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF2903ZPBF Summary of contents

Page 1

... Limited Parameter -96097A IRF2903ZPbF ® HEXFET Power MOSFET 30V DSS R = 2.4m DS(on 75A TO-220AB IRF2903ZPbF D S Drain Source Max. Units 260 180 A 75 1020 290 W 2.0 W/°C ± 290 mJ 820 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 175°C 10 25°C 1 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = 8000 Ciss 6000 4000 Coss ...

Page 5

LIMITED BY PACKAGE 250 200 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 TOP Single Pulse BOTTOM 1% Duty Cycle 250 75A 200 150 100 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" sembly line pos ition indicates "Lead - Free" TO-220AB package is not ...

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