IXFC16N50P IXYS, IXFC16N50P Datasheet
IXFC16N50P
Manufacturer Part Number
IXFC16N50P
Description
MOSFET N-CH 500V 10A ISOPLUS220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFC16N50P.pdf
(4 pages)
Specifications of IXFC16N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
0.45
Ciss, Typ, (pf)
2480
Qg, Typ, (nc)
43
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
125
Rthjc, Max, (ºc/w)
1
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
ISOL
C
GS(th)
DS(on)
J
DSS
= 25° C unless otherwise specified)
Continuous
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
D
= 2.5 mA
= 250 µA
TM
G
= I
DS
= 10 Ω
T,
= 0 V
(Note 1)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFC 16N50P
,
500
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
± 30
± 40
500
500
750
125
150
300
260
10
35
10
25
10
2
±100
Max.
5.5
50
450 mΩ
5
V/ns
N/lb
V~
mJ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
ISOPLUS220
G = Gate
S = Source
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
l
Silicon chip on Direct-Copper-Bond
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
V
I
R
t
substrate
G
D25
rr
DS(on)
DSS
D
S
DS (on)
E153432
HDMOS
TM
≤ ≤ ≤ ≤ ≤ 450 mΩ Ω Ω Ω Ω
= 500
=
≤ ≤ ≤ ≤ ≤ 200
(IXFC)
D = Drain
Isolated back surface
TM
10
process
DS99411E(03/06)
ns
A
V
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IXFC16N50P Summary of contents
Page 1
... D = ± GSS DSS DS DSS (Note 1) DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFC 16N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 750 ≤ DSS 125 -55 ... +150 150 -55 ... +150 300 260 2500 11..65/2.5..15 ...
Page 2
... A, -di/dt = 100 A/µ 100 Note 1: Test Current IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ 2250 240 ...
Page 3
... DS(on) Junction Temperature 3 10V GS 2.8 2.5 2 16A D 1.9 1.6 1.3 1 0.7 0.4 -50 - Degrees Centigrade J Fig. 5. Maximum Drain Current v s. Case Temperature -50 - Degrees Centigrade J © 2006 IXYS All rights reserved 2.8 2.6 2.4 2 1.6 1.4 1.2 1 0.8 75 100 125 150 ...
Page 4
... Q - NanoCoulombs G Fig. 11. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º 100 V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 0.3 10,000 1,000 100 10.00 25µs 1.00 100µs 1ms 10m 0.10 0.01 1000 0.0001 IXFC 16N50P Fig ...