MOSFET N-CH 55V 280A TO-247

IXTH280N055T

Manufacturer Part NumberIXTH280N055T
DescriptionMOSFET N-CH 55V 280A TO-247
ManufacturerIXYS
SeriesTrenchMV™
IXTH280N055T datasheet
 

Specifications of IXTH280N055T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs3.2 mOhm @ 50A, 10VDrain To Source Voltage (vdss)55V
Current - Continuous Drain (id) @ 25° C280AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds9700pF @ 25V
Power - Max550WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0032 Ohms
Drain-source Breakdown Voltage55 VContinuous Drain Current280 A
Power Dissipation550 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)55Id(cont), Tc=25°c, (a)280
Rds(on), Max, Tj=25°c, (?)0.0032Ciss, Typ, (pf)9700
Qg, Typ, (nc)200Trr, Typ, (ns)54
Trr, Max, (ns)-Pd, (w)550
Rthjc, Max, (k/w)0.27Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062in.) from case for 10s
L
Plastic body for 10 seconds
M
Mounting torque (TO-247)(TO-3P)
d
Weight
TO-247
TO-3P
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 250μA
GS(th)
DS
GS
D
= ± 20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= 10V, I
= 50A, Notes 1, 2
DS(on)
GS
D
© 2008 IXYS CORPORATION, All rights reserved
IXTH280N055T
IXTQ280N055T
Maximum Ratings
55
= 1MΩ
55
GS
± 20
280
75
600
JM
40
1.5
550
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
6.0
5.5
Characteristic Values
Min.
Typ.
55
2.0
T
= 150°C
J
2.6
V
= 55V
DSS
I
= 280A
D25
3.2mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
G
V
D
S
V
V
TO-3P (IXTQ)
A
A
A
A
G
J
D
S
W
°C
°C
°C
G = Gate
D
°C
S = Source
TAB = Drain
°C
Features
Nm/lb.in.
International standard packages
g
175°C Operating Temperature
g
Avalanche Rated
Low R
DS(on)
Advantages
Easy to mount
Max.
Space savings
V
High power density
4.0
V
Applications
±200 nA
Automotive
μA
5
- Motor Drives
- High Side Switch
μA
250
- 12V Battery
3.2 mΩ
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
(TAB)
(TAB)
= Drain
DS99630A(07/08)

IXTH280N055T Summary of contents

  • Page 1

    ... ± 20V GSS DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTH280N055T IXTQ280N055T Maximum Ratings 55 = 1MΩ ± 20 280 75 600 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 1. 6.0 5.5 Characteristic Values Min. Typ 150° ...

  • Page 2

    ... I = 25A 50 DSS D 53 0.25 Characteristic Values Min. Typ Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH280N055T IXTQ280N055T TO-247 (IXTH) Outline Max Terminals Gate nC Dim. Millimeter Min 4 2 2.2 2 0.27 °C ...

  • Page 3

    ... Value 175º 25ºC J 200 250 300 350 IXTH280N055T IXTQ280N055T Fig. 2. Extended Output Characteristics @ 25º 10V 0.0 0.5 1.0 1.5 2 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V ...

  • Page 4

    ... T = 25º 0.9 1.0 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTH280N055T IXTQ280N055T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 27. 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...

  • Page 5

    ... 240 90 220 125ºC J 200 80 180 75 160 70 140 65 120 60 100 25º IXTH280N055T IXTQ280N055T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 3.3 Ω 10V 27. 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off ) = 3.3 Ω 10V 27. ...