IRFB3207PBF International Rectifier, IRFB3207PBF Datasheet - Page 5

• Manufacturer Part Number: IRFB3207PBF
• Description: MOSFET N-CH 75V 180A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3207PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 50V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Application: High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits
• Channel Type: N-Channel
• Current, Drain: 180 A
• Fall Time: 74 ns (Typ.)
• Gate Charge, Total: 180 nC
• Mounting And Package Type: PCB Mount and TO-220AB Package
• Operating And Storage Temperature: -55 to +175 °C (Max.)
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 3.6 Milliohms
• Resistance, Thermal, Junction To Case: 0.45 °C⁄W (Max.)
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 120 ns (Typ.)
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 29 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Diode Forward: 1.3 V (Max.)
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB3207PBF

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Fig 15. Maximum Avalanche Energy vs. Temperature
1000
800
600
400
200
0
25
0.0001
0.001
0.01
100
0.1
10
Starting T J , Junction Temperature (°C)
1
1.0E-06
1
1E-006
50
D = 0.50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.20
0.10
0.05
0.02
0.01
TOP
BOTTOM 1% Duty Cycle
I D = 75A
75
SINGLE PULSE
( THERMAL RESPONSE )
100
Single Pulse
1.0E-05
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
0.10
0.05
0.01
t 1 , Rectangular Pulse Duration (sec)
175
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neitherT
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
is exceeded.
thJC
D (ave)
= Allowable avalanche current.
=
τ
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
J
τ
J
τ
1
Ci= τi/Ri
= Average power dissipation per single avalanche pulse.
τ
av
1
Ci= i/Ri
) = Transient thermal resistance, see Figures 13)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
jmax
1.0E-03
0.001
R
1
R
. This is validated for every part type.
1
P
τ
2
D (ave)
τ
R
2
2
R
2
τ
= 1/2 ( 1.3·BV·I
I
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
E
C
av
τ
AS (AR)
= 2DT/ [1.3·BV·Z
av
Ri (°C/W)
1.0E-02
·f
0.2151
0.2350
0.01
= P
D (ave)
av
) = DT/ Z
·t
th
av
0.001175
0.017994
]
τi (sec)
thJC
jmax
1.0E-01
0.1
jmax
(assumed as
nor Iav (max)
5