IRFBA1405PPBF International Rectifier, IRFBA1405PPBF Datasheet

IRFBA1405PPBF

Manufacturer Part Number

IRFBA1405PPBF

Description

MOSFET N-CH 55V 174A SUPER-220

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFBA1405PPBF.pdf (10 pages)

Specifications of IRFBA1405PPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5 mOhm @ 101A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

174A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Input Capacitance (ciss) @ Vds

5480pF @ 25V

Power - Max

330W

Mounting Type

Through Hole

Package / Case

Super-220™-3 (Straight Leads)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

174 A

Power Dissipation

330 W

Mounting Style

Through Hole

Gate Charge Qg

170 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFBA1405PPBF

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Typical Applications

Description

Specifically designed for Automotive applications, this Stripe Planar design

of HEXFET

achieve extremely low on-resistance per silicon area. Additional features

of this MOSFET are a 175

switching speed and improved ruggedness in single and repetitive

avalanche. The Super-220

have the same mechanical outline and pinout as the industry standard

TO-220 but can house a considerably larger silicon die. The result is

significantly increased current handling capability over both the TO-220

and the much larger TO-247 package. The combination of extremely low

on-resistance silicon and the Super-220

reduce the component count in multiparalled TO-220 applications, reduce

system power dissipation, upgrade existing designs or have TO-247

performance in a TO-220 outline. This package has been designed to

meet automotive, Q101, qualification standard.

These benefits make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other applications.

Benefits

dv/dt

www.irf.com

Lead-Free

175°C Operating Temperature

STG

Wiper Control

Climate Control

Power Door

Electric Power Steering (EPS)

Ultra Low On-Resistance

Advanced Process Technology

Anti-lock Braking System (ABS)

Dynamic dv/dt Rating

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

@ T

= 25°C

= 100°C

= 25°C

Power MOSFETs utilizes the latest processing techniques to

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy‡

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

C junction operating temperature, fast

is a package that has been designed to

Parameter

AUTOMOTIVE MOSFET

package makes it ideal to

@ 10V

IRFBA1405PPbF

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

HEXFET

-40 to + 175

-55 to + 175

174†

123†

Max.

680

330

± 20

560

2.2

5.0

Power MOSFET

DS(on)

DSS

= 174A†

= 5.0mΩ

= 55V

Units

W/°C

V/ns

°C

Related parts for IRFBA1405PPBF

IRFBA1405PPBF Summary of contents

Page 1

... Repetitive Avalanche Energy‡ AR Peak Diode Recovery dv/dt ƒ dv/dt T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Recommended clip force www.irf.com AUTOMOTIVE MOSFET IRFBA1405PPbF G TM package makes it ideal to @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 ® HEXFET Power MOSFET D V ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 0 25 ...

Page 8

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ - • • • P.W. Period D ...

Page 9

A 10.00 [.394] 1.50 [.059] 0.50 [.020] 15.00 [.590] 14.00 [.552 4.00 [.157] 14.50 [.570] 3.50 [.138] 13.00 [.512] 1.30 [.051] 3X 0.90 [.036] 2.55 [.100] 0.25 [.010] 2X Notes: Repetitive rating; pulse width ...

Page 10

... Super-220 (TO-273AA) Part Marking Information EXAMPLE: THIS IS AN IRFBA22N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" not recommended for surface mount application This product has been designed and qualified for the automotive [Q101] market. ...

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