IRFP4004PBF International Rectifier, IRFP4004PBF Datasheet

IRFP4004PBF

Manufacturer Part Number

IRFP4004PBF

Description

MOSFET N-CH 40V 195A TO-247AC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFP4004PBF.pdf (8 pages)

Specifications of IRFP4004PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.7 mOhm @ 195A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

195A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

330nC @ 10V

Input Capacitance (ciss) @ Vds

8920pF @ 25V

Power - Max

380W

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Current, Drain

350 A

Gate Charge, Total

190 nC

Package Type

TO-247AC

Polarization

N-Channel

Power Dissipation

380 W

Resistance, Drain To Source On

1.35 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

160 ns

Time, Turn-on Delay

59 ns

Transconductance, Forward

290 S

Voltage, Breakdown, Drain To Source

40 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Type

Power MOSFET

Voltage, Vds Typ

40V

Current, Id Cont

350A

Resistance, Rds On

1.35mohm

Voltage, Vgs Rds On Measurement

10V

Voltage, Vgs Th Typ

Case Style

TO-247AC

Rohs Compliant

Yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

350 A

Mounting Style

Through Hole

Gate Charge Qg

220 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

IRFP4004PBF

Quantity:

4 800

Company:

H&T Electronics

Part Number:

IRFP4004PBF

Quantity:

16 286

Current page: 1 of 8
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Applications

Benefits

www.irf.com

Absolute Maximum Ratings

dv/dt

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

SMPS

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

Pulsed Drain Current d

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery f

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy e

Avalanche Current d

Repetitive Avalanche Energy g

Junction-to-Case k

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient jk

Parameter

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

Gate

IRFP4004PbF

Typ.

See Fig. 14, 15, 22a, 22b

0.24

–––

D (Silicon Limited)

D (Package Limited)

DSS

DS(on)

10lbxin (1.1Nxm)

-55 to + 175

350c

250c

Max.

1390

TO-247AC

195

380

± 20

300

290

HEXFET Power MOSFET

2.5

2.0

typ.

Drain

max.

Max.

0.40

–––

1.35mΩ

1.70mΩ

Source

350A c

195A

40V

Units

W/°C

°C/W

V/ns

°C

06/05/08

Related parts for IRFP4004PBF

IRFP4004PBF Summary of contents

Page 1

... I AR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case k R θJC R Case-to-Sink, Flat Greased Surface θCS Junction-to-Ambient jk R θJA www.irf.com IRFP4004PbF Gate @ 10V (Silicon Limited 10V (Wire Bond Limited) GS See Fig. 14, 15, 22a, 22b Typ. 0.24 HEXFET Power MOSFET V 40V DSS R typ. 1.35mΩ ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C ...

Page 4

175°C 100 25° 0.1 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 300 Limited By Package 250 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed avalanche ...

Page 6

250µ 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) ...

Page 7

D.U.T + ƒ ‚ - R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. This product ...

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