IXTH20P50P IXYS, IXTH20P50P Datasheet

MOSFET P-CH 500V 20A TO-247

IXTH20P50P

Manufacturer Part Number
IXTH20P50P
Description
MOSFET P-CH 500V 20A TO-247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTH20P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5120pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-20.0
Rds(on), Max, Tj=25°c, (?)
0.450
Ciss, Typ, (pf)
5120
Qg, Typ, (nc)
103
Trr, Typ, (ns)
406
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS,
, I
DD
D
D
V
= - 250 μA
D
≤ V
= - 250μA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTH20P50P
IXTT20P50P
- 500
- 55 ... +150
- 55 ... +150
- 2.0
Characteristic Values
Min.
Maximum Ratings
1.13 / 10
- 500
- 500
- 20
- 60
- 20
±20
±30
460
150
300
260
2.5
6.0
4.0
10
Typ.
- 200 μA
±100 nA
- 4.0
Nm/lb.in.
- 25 μA
450 mΩ
Max.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
J
V
I
R
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
TO-268 (IXTT)
D25
International Standard Packages
Avalanche Rated
Rugged PolarP
Low Package Inductance
Fast Intrinsic Diode
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
G
D
S
G
≤ ≤ ≤ ≤ ≤
=
=
S
D
TAB = Drain
TM
- 500V
- 20A
Process
450mΩ Ω Ω Ω Ω
= Drain
DS99984A(3/09)
(TAB)
(TAB)

Related parts for IXTH20P50P

IXTH20P50P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTH20P50P IXTT20P50P Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ± 2.5 ≤ 150° 460 - 55 ... +150 150 - 55 ... +150 300 260 1. 6.0 4.0 Characteristic Values Min. Typ. ...

Page 2

... A Q 5. 2.8 V TO-268 (IXTT) Outline ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH20P50P IXTT20P50P ∅ Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 20A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature - -50 - Degrees Centigrade J IXTH20P50P IXTT20P50P - -21 -24 -27 -30 = -10A vs -10A D 100 125 150 100 125 150 IXYS REF: T_20P50P(B7) 5-13-08 ...

Page 4

... T = 25º -2.5 -3.0 -3.5 - 100.0 C iss - 10.0 C oss - 1.0 C rss - 0.1 -25 -30 -35 - IXTH20P50P IXTT20P50P Fig. 8. Transconductance -5 -10 -15 -20 - Amperes D Fig. 10. Gate Charge V = -250V 10A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTH20P50P IXTT20P50P 0.1 1 IXYS REF: T_20P50P(B7) 5-13-08 10 ...

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