IXFH32N50 IXYS, IXFH32N50 Datasheet
IXFH32N50
Manufacturer Part Number
IXFH32N50
Description
MOSFET N-CH 500V 32A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH32N50.pdf
(4 pages)
Specifications of IXFH32N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
5700pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Forward Transconductance Gfs (max / Min)
28 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
5200
Qg, Typ, (nc)
227
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH32N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH32N50
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH32N50
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFH32N50Q
Manufacturer:
RENESAS
Quantity:
50 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AS
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
T
T
T
I
Continuous
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
V
V
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
pulse width limited by T
S
D
J
J
J
C
C
C
C
C
GS
DSS
DS
GS(th)
GS
DS
GS
GS
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
£ 150°C, R
= 25°C
£ I
= 25°C to 150°C
= 25°C to 150°C; R
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
Test Conditions
Test Conditions
DM
temperature coefficient
temperature coefficient
GS
, di/dt £ 100 A/ms, V
, I
D
D
TM
DC
DSS
D
= 1 mA
= 4 mA
, V
rr
= 15A
G
, HDMOS
= 2 W
DS
= 0
GS
JM
= 1 MW
DD
TM
£ V
T
T
32N50
30N50
Family
J
J
DSS
= 25°C
= 125°C
,
(T
±30
30N50
32N50
30N50
32N50
30N50
32N50
J
= 25°C, unless otherwise specified)
IXFH/IXFT 30N50
IXFH/IXFT 32N50
±100
min.
200
500
2
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
-0.206
0.102
1.13/10
typ.
500
500
±20
120
128
360
150
300
30
32
1.5
V
30
32
45
5
6
0.15
0.16
max.
4
1
Nm/lb.in.
V/ns
%/K
%/K
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
W
V
V
V
A
A
A
A
A
A
V
V
J
g
TO-247 AD (IXFH)
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Advantages
•
•
•
G = Gate,
S = Source,
TO-268 (D3) Case Style
t
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Diode
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
rr
500 V
500 V
V
£ 250 ns
G
DSS
DS (on)
S
HDMOS
D = Drain,
TAB = Drain
30 A
32 A
I
D25
TM
process
(TAB)
D (TAB)
97518H (6/99)
0.16 W
0.15 W
R
DS(on)
1 - 4
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IXFH32N50 Summary of contents
Page 1
... V DSS DS DSS 15A DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFT 30N50 IXFH/IXFT 32N50 TM Family Maximum Ratings 500 500 ±20 ±30 V 30N50 30 32N50 ...
Page 2
... L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 30N50 IXFH 32N50 IXFT 30N50 IXFT 32N50 TO-247 AD (IXFH) Outline ...
Page 3
... Volts DS Figure 3. R normalized to 15A/25 DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 Tj=25 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature 40 IXFH32N50 32 IXFH30N50 -50 - Degrees C C © 2000 IXYS All rights reserved vs 2.8 2.4 2.0 1 1.2 0 100 125 150 IXFH 30N50 IXFH 32N50 ...
Page 4
... =125 0.4 0.6 0 Volts SD Figure 10. Transient Thermal Resistance 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0. © 2000 IXYS All rights reserved Figure 8. Capacitance Curves 4500 4000 3500 3000 2500 2000 1500 1000 200 250 300 =25 = 0.1 1.0 1 Pulse Width - Seconds ...