IXFK64N50P IXYS, IXFK64N50P Datasheet - Page 2

• Manufacturer Part Number: IXFK64N50P
• Description: MOSFET N-CH 500V 64A TO-264
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFK64N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8700pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 64 A
• Power Dissipation: 830000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 9700
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
d(on)
r
d(off)
f
rr
fs
RM
SD
one or moreof the following U.S. patents:
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
GS
R
DS
GS
GS
G
GS
= I
= 25A, -di/dt = 100 A/µs
= 100V
= 0 V
= 20 V; I
= 10 V, V
= 2 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
4,850,072
4,881,106
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
(T
(T
= 0.5 I
=0.5 I
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
30
Characteristic Values
Characteristic Values
8700
6.0
Typ. Max.
Typ. Max.
0.15
970
150
0.6
50
90
30
25
85
22
50
50
6,162,665
6,259,123 B1
6,306,728 B1
0.15 ° C/W
150
200
1.5
64
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
TO-264 (IXFK) Outline
PLUS 247
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
TM
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
6,727,585
6,759,692
6,771,478 B2
(IXFX) Outline
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXFK 64N50P
IXFX 64N50P
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190