IXFX120N20 IXYS, IXFX120N20 Datasheet
IXFX120N20
Manufacturer Part Number
IXFX120N20
Description
MOSFET N-CH 200V 120A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFX120N20.pdf
(4 pages)
Specifications of IXFX120N20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.017 Ohms
Forward Transconductance Gfs (max / Min)
77 s
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
560 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.017
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
300
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IFX120N20
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFX120N20
Manufacturer:
IXYS
Quantity:
6 285
Part Number:
IXFX120N20
Manufacturer:
IR
Quantity:
20 000
HiPerFET
Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2002 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
D104
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DSS
DS(on)
d
V
V
V
V
Note 1
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
S
GS
GS
DS
GS
C
C
C
C
C
C
C
J
J
J
GS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C (MOSFET chip capability)
= 104 C (External lead capability)
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= V
= 0 V, I
= 20 V, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
DSS
, di/dt
, I
TM
D
D
= 3mA
= 8mA
D
= 0.5 • I
DS
G
100 A/ s, V
= 2
= 0
D25
TO-264
PLUS 247
TO-264
GS
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C, unless otherwise specified)
= 25 C
= 125 C
DSS
JM
IXFK 120N20
IXFX 120N20
200
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.9/6 Nm/b.in.
200
200
120
480
120
560
150
300
76
64
15
20
30
3
max.
100
200 nA
17 m
10
4.0 V
6
2 mA
V/ns
mJ
W
C
C
C
C
V
V
V
V
A
A
A
A
V
A
g
g
J
PLUS 247
TO-264 AA (IXFK)
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
• Space savings
• High power density
G = Gate
S = Source
rated
- easy to drive and to protect
power supplies
mounting
V
I
R
t
D25
rr
DSS
DS(on)
G
DS (on)
G
TM
D
250 ns
D
TM
(IXFX)
S
HDMOS
package for clip or spring
= 200 V
= 120 A
=
D = Drain
TAB = Drain
TM
process
17 m
98636-B (9/02)
(TAB)
(TAB)
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IXFX120N20 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2002 IXYS All rights reserved IXFX 120N20 IXFK 120N20 Maximum Ratings 200 = 1 M 200 120 76 480 JM 120 DSS 560 -55 ... +150 150 -55 ... +150 300 0 ...
Page 2
... I = 50A,-di/dt = 100 Note: 1. Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Note 1 40 ...
Page 3
... 1.0 0 100 120 140 160 180 200 I - Amperes D Fig. 5. Drain vs. Case Temperature 160 140 120 100 -50 - Degrees C C © 2002 IXYS All rights reserved o C Fig. 2. Output Characteristics at 125 140 120 100 1.5 2 120 100 100 125 150 3.0 IXFK 120N20 ...
Page 4
... V - Volts SD 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 20000 10000 300 400 500 1.0 1.2 1.4 Fig. 10. Maximum Thermal Impedance ...