NTR4101PT1G ON Semiconductor, NTR4101PT1G Datasheet
NTR4101PT1G
Manufacturer Part Number
NTR4101PT1G
Description
MOSFET P-CH 20V 1.8A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR4101PT1G.pdf
(5 pages)
Specifications of NTR4101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 1.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
675pF @ 10V
Power - Max
420mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
75 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.4 A
Power Dissipation
730 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.085Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR4101PT1GOSTR
Available stocks
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Price
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Quantity:
36 000
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950
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30 000
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20 000
NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 6
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
ESD Capability (Note 3)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Leading −20 V Trench for Low R
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Package is Available
Load/Power Management for Portables
Load/Power Management for Computing
Charging Circuits and Battery Protection
(Cu area = 1.127 in sq [1 oz] including traces)
Parameter
Parameter
(T
J
Steady
State
t ≤ 10 s
Steady
State
t ≤ 10 s
Steady
State
= 25°C unless otherwise noted)
RS = 1500 W
C = 100 pF,
tp = 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
DS(on)
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
Symbol
V
T
ESD
V
R
R
R
I
P
P
T
DSS
STG
T
I
I
DM
I
GS
D
D
S
qJA
qJA
qJA
J
D
D
L
,
−55 to
Value
±8.0
−2.4
−1.7
−3.2
0.73
1.25
−1.8
−1.3
0.42
−2.4
Max
−20
−18
225
150
260
170
100
300
1
°C/W
Unit
Unit
°C
°C
W
W
V
V
A
A
A
V
A
†For information on tape and reel specifications,
NTR4101PT1
NTR4101PT1G
V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
(BR)DSS
−20 V
CASE 318
STYLE 21
Device
SOT−23
(Note: Microdot may be in either location)
2
ORDERING INFORMATION
TR4
M
G
G
3
http://onsemi.com
http://onsemi.com
P−Channel MOSFET
112 mW @ −1.8 V
70 mW @ −4.5 V
90 mW @ −2.5 V
R
DS(ON)
Package
Pb−Free
SOT−23
SOT−23
= Device Code
= Date Code
= Pb−Free Package
MARKING DIAGRAM &
Publication Order Number:
PIN ASSIGNMENT
TYP
S
D
Gate
1
3000/Tape & Reel
3000/Tape & Reel
TR4 MG
Drain
Shipping
3
G
NTR4101P/D
Source
I
−3.2 A
D
MAX
2
†
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NTR4101PT1G Summary of contents
Page 1
... Microdot may be in either location) Device Symbol Max Unit NTR4101PT1 R 170 °C/W qJA NTR4101PT1G R 100 qJA 300 R qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note −250 mA Zero Gate Voltage Drain Current (Note − Gate−to−Source Leakage Current ...
Page 3
TYPICAL PERFORMANCE CURVES −10 V − −2 −2 −2 −1 −1 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...
Page 4
TYPICAL PERFORMANCE CURVES 1000 800 C iss 600 400 C 200 oss C rss −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 7. Capacitance Variation 1000 V = ...
Page 5
... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...