VN2222LLG ON Semiconductor, VN2222LLG Datasheet - Page 3

• Manufacturer Part Number: VN2222LLG
• Description: MOSFET N-CH 60V 150MA TO-92
• Manufacturer: ON Semiconductor

Specifications of VN2222LLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 400mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 150 mA
• Package Type: TO-92
• Polarization: N-Channel
• Resistance, Drain To Source On: 7.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 100 Micromhos
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: VN2222LLGOS

0.8
1.8
1.6
1.4
1.2
0.6
0.4
0.2
2
1
0.4
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
−60
0
2
1
T
1
A
= 25 C
Figure 3. Temperature versus Static
V
I
2
D
V
GS
−20
DS
= 200 mA
Drain−Source On−Resistance
= 10 V
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
3
T, TEMPERATURE ( C)
4
+20
5
6
+60
7
8
+100
V
GS
= 10 V
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9
3 V
9 V
8 V
7 V
6 V
5 V
4 V
VN2222LL
10
+140
3
1.15
1.05
0.95
0.85
0.75
0.8
0.7
0.6
0.4
0.2
1.2
1.1
0.9
0.8
1
1
−60
0
V
DS
1
Figure 4. Temperature versus Gate
= 10 V
Figure 2. Transfer Characteristics
−20
2
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
3
0
Threshold Voltage
T, TEMPERATURE ( C)
+20
4
5
−55 C
+60
6
7
125 C
+100
V
I
D
DS
8
= 1 mA
= V
GS
25 C
9
+140
10