SIB452DK-T1-GE3 Vishay, SIB452DK-T1-GE3 Datasheet

MOSFET N-CH 190V 1.5A SC75-6

SIB452DK-T1-GE3

Manufacturer Part Number
SIB452DK-T1-GE3
Description
MOSFET N-CH 190V 1.5A SC75-6
Manufacturer
Vishay
Datasheet

Specifications of SIB452DK-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 Ohm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
190V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6.5nC @ 10V
Input Capacitance (ciss) @ Vds
135pF @ 50V
Power - Max
13W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-75-6L
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Dual Source
Resistance Drain-source Rds (on)
2.4 Ohm @ 4.5 V
Drain-source Breakdown Voltage
190 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
0.67 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.5A
Drain Source Voltage Vds
190V
On Resistance Rds(on)
2.4ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIB452DK-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIB452DK-T1-GE3
Manufacturer:
LT
Quantity:
268
Part Number:
SIB452DK-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 68832
S-81724-Rev. A, 04-Aug-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
C
190
1.60 mm
= 25 °C.
6
(V)
PowerPAK SC-75-6L-Single
D
5
D
4
S
2.4 at V
2.6 at V
6.0 at V
D
1
h
R
S
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
1.60 mm
2
GS
GS
GS
G
= 4.5 V
= 2.5 V
= 1.8 V
(Ω)
J
3
= 150 °C)
b, f
N-Channel 190-V (D-S) MOSFET
Ordering Information: SiB452DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
Part # code
1.48
1.5
0.4
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
2.3 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
t ≤ 5 s
A C X
X X X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Boost Converter for Portable Devices
Symbol
Symbol
T
J
R
R
SC-75 Package
- Small Footprint Area
- Low On-Resistance
V
V
I
P
, T
DM
I
I
thJC
GS
thJA
DS
D
S
D
stg
®
Power MOSFET
Typical
7.5
41
- 55 to 150
0.67
0.53
0.67
2.4
1.6
Limit
± 16
1.24
190
260
1.5
1.5
1.5
8.4
13
b, c
b, c
b, c
b, c
b, c
Maximum
9.5
51
Vishay Siliconix
G
SiB452DK
®
N-Channel MOSFET
www.vishay.com
°C/W
D
S
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SIB452DK-T1-GE3

SIB452DK-T1-GE3 Summary of contents

Page 1

... 1. Ordering Information: SiB452DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... SiB452DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68832 S-81724-Rev. A, 04-Aug-08 New Product thru 2 4.5 V 0.9 1.2 1 152 SiB452DK Vishay Siliconix 1.0 0.8 0.6 0 ° 125 °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 210 180 C 150 iss ...

Page 4

... SiB452DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 1.3 1.2 1 1.0 0.9 0.8 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.8 1 250 µA 10 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68832 S-81724-Rev. A, 04-Aug-08 New Product 15 12 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB452DK Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiB452DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords