CPH6429-TL-E SANYO, CPH6429-TL-E Datasheet - Page 3

• Manufacturer Part Number: CPH6429-TL-E
• Description: MOSFET N-CH 60V 2A CPH6
• Manufacturer: SANYO

Specifications of CPH6429-TL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 1A, 4V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Gate Charge (qg) @ Vgs: 4.2nC @ 4V
• Input Capacitance (ciss) @ Vds: 325pF @ 20V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 6-CPH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1143-2

100
1.0
0.1
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0.01
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
0
0.1
0
0
V DS =10V
V DS =30V
I D =2.0A
0.5
2
20
3
2
1.0
Ambient Temperature, Ta -- C
40
Total Gate Charge, Qg -- nC
5
3
Drain Current, I D -- A
Drain Current, I D -- A
7
1.5
SW Time -- I D
0.1
60
V GS -- Qg
P D -- Ta
y
5
2.0
fs
2
80
7
-- I D
2.5
3
t d (on)
1.0
100
5
3.0
7
1.0
120
3.5
2
V DD =30V
V GS =4V
2
140
3
4.0
IT06816
IT06818
IT06820
IT07337
3
160
4.5
CPH6429
5
5
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (1200mm
2 3
5
5 7 0.1
0.4
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Operation in this area
is limited by R DS (on).
Diode Forward Voltage, V SD -- V
10
2 3
I F -- V SD
0.6
5 7 1.0
A S O
Ciss
15
2 3
0.8
20
5 7 10
2
0.8mm)
1.0
25
2 3
No.8081-3/4
f=1MHz
V GS =0
IT06817
IT06819
IT07336
5 7 100
1.2
30