SIA432DJ-T1-GE3 Vishay, SIA432DJ-T1-GE3 Datasheet

MOSFET N-CH 30V 12A SC70-6

SIA432DJ-T1-GE3

Manufacturer Part Number
SIA432DJ-T1-GE3
Description
MOSFET N-CH 30V 12A SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA432DJ-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 15V
Power - Max
19.2W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Transistor Polarity
N Channel
Continuous Drain Current Id
10.1A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Configuration
Single Quad Drain Dual Source
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.1 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA432DJ-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA432DJ-T1-GE3
Manufacturer:
AD
Quantity:
13 265
Part Number:
SIA432DJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68697
S-81172-Rev. A, 26-May-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
DS
30
2.05 mm
6
(V)
PowerPAK SC-70-6L-Single
D
5
D
4
S
0.024 at V
0.020 at V
D
1
R
S
http://www.vishay.com/ppg?73257
DS(on)
D
2.05 mm
2
GS
GS
G
J
(Ω)
3
= 4.5 V
= 10 V
= 150 °C)
b, f
N-Channel 30-V (D-S) MOSFET
Ordering Information: SiA432DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
10.1
Part # code
(A)
9.2
Steady State
b, c
d, e
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
Marking Code
g
5.6
(Typ.)
New Product
A L X
X X X
Symbol
R
R
thJC
thJA
Symbol
T
Lot Traceability
and Date code
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch
SC-70 Package
- Small Footprint Area
Typical
5.3
28
®
Power MOSFET
- 55 to 150
10.1
8.1
2.9
3.5
2.2
Limit
± 20
19.2
12.3
260
12
12
12
30
30
b, c
b, c
b, c
b, c
a
a
b, c
a
Maximum
6.5
36
Vishay Siliconix
G
N-Channel MOSFET
®
SiA432DJ
www.vishay.com
D
S
°C/W
Unit
Unit
RoHS
COMPLIANT
°C
W
V
A
1

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SIA432DJ-T1-GE3 Summary of contents

Page 1

... 2. Ordering Information: SiA432DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... SiA432DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 7 Total Gate Charge (nC) g Gate Charge Document Number: 68697 S-81172-Rev. A, 26-May-08 New Product 1.5 2.0 1000 = 4 22 SiA432DJ Vishay Siliconix ° 125 ° 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 800 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... SiA432DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.1 - 0.1 - 0.3 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.075 0.060 °C J 0.045 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68697 S-81172-Rev. A, 26-May-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA432DJ Vishay Siliconix 100 125 T - Temperature (°C) J Power Derating www.vishay.com 150 5 ...

Page 6

... SiA432DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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