ZXMN10A25KTC Diodes Zetex, ZXMN10A25KTC Datasheet - Page 4

MOSFET N-CH 100V DPAK

ZXMN10A25KTC

Manufacturer Part Number
ZXMN10A25KTC
Description
MOSFET N-CH 100V DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN10A25KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17.16nC @ 10V
Input Capacitance (ciss) @ Vds
859pF @ 50V
Power - Max
2.11W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A25KTCTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A25KTC
Manufacturer:
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Quantity:
2 300
Company:
Part Number:
ZXMN10A25KTC
Quantity:
4 900
Company:
Part Number:
ZXMN10A25KTC
Quantity:
4 900
Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - August 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
V
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
amb
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
100
2.0
4
17.16
Typ.
57.3
17.7
3.77
5.36
0.85
40.5
859
7.3
4.9
3.7
9.4
9.6
33
62
2%.
0.125
0.150
Max.
0.95
100
0.5
4.0
Unit Conditions
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN10A25K
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 2.9A
= 2.9A
=25°C, I
=25°C, I
≅6.0 , V
= 100V, V
= 15V, I
= 50V, V
= 50V, V
= 50V, V
=±20V, V
= 10V, I
= 6V, I
= 50V, I
=0V
www.zetex.com
S
S
D
= 4A,
= 2.9A,
D
GS
D
D
= 2.6A
GS
GS
GS
= 2.9A
= 2.9A
= 1A
DS
GS
DS
GS
= 10V
=0V
= 5V
= 10V
=0V
=V
=0V
=0V
GS

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