SI4403BDY-T1-E3 Vishay, SI4403BDY-T1-E3 Datasheet

MOSFET P-CH 20V 7.3A 8-SOIC

SI4403BDY-T1-E3

Manufacturer Part Number
SI4403BDY-T1-E3
Description
MOSFET P-CH 20V 7.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4403BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 9.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
1V @ 350µA
Gate Charge (qg) @ Vgs
50nC @ 5V
Power - Max
1.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.017 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.3 A
Power Dissipation
1350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9.9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
17mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Power Dissipation Pd
2.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4403BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4403BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 916
Part Number:
SI4403BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4403BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4403BDY-T1-E3
Quantity:
40
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72268
S09-0705-Rev. C, 27-Apr-09
Ordering Information: Si4403BDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
(V)
G
S
S
S
Si4403BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.017 at V
0.023 at V
0.032 at V
1
2
3
4
R
DS(on)
T op V i e w
J
a
SO-8
= 150 °C)
GS
GS
GS
a
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
P-Channel 1.8-V (G-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
- 9.9
- 8.5
- 7.2
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
TrenchFET
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFETs
Typical
- 9.9
- 7.9
- 2.3
10 s
2.5
1.6
43
71
19
G
P-Channel MOSFET
- 55 to 150
- 20
- 30
± 8
Steady State
S
D
Maximum
- 7.3
- 5.8
- 1.3
1.35
0.87
50
92
25
Vishay Siliconix
Si4403BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4403BDY-T1-E3 Summary of contents

Page 1

... GS 0.032 1 SO Ordering Information: Si4403BDY-T1-E3 (Lead (Pb)-free) Si4403BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4403BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72268 S09-0705-Rev. C, 27-Apr °C J 0.8 1.0 1.2 Si4403BDY Vishay Siliconix 4000 3500 3000 C iss 2500 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si4403BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 350 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited (DS)on 10 Limited D(on ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72268. Document Number: 72268 S09-0705-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4403BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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