IRF6617 International Rectifier, IRF6617 Datasheet - Page 5

• Manufacturer Part Number: IRF6617
• Description: MOSFET N-CH 30V 14A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6617

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6617; IRF6617TR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance Vs. Gate Voltage
24
20
16
12
8
4
Fig 15a. Switching Time Test Circuit
2.0
Fig 16a. Gate Charge Test Circuit
R G
12V
20V
V
V DS
V
GS
V GS , Gate-to-Source Voltage (V)
GS
Same Type as D.U.T.
4.0
t p
Duty Factor < 0.1%
Current Regulator
Pulse Width < 1µs
.2µF
V
GS
I AS
D.U.T
50KΩ
3mA
Current Sampling Resistors
0.01 Ω
L
V
T J = 25°C
.3µF
DS
T J = 125°C
6.0
I
G
D.U.T.
D.U.T
I
D
15V
8.0
L
D
I D = 15A
DRIVER
+
-
V
V
DS
DD
+
-
+
-
V DD
10.0
A
Fig 13. Maximum Avalanche Energy Vs. Drain Current
90%
Fig 14b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 15b. Switching Time Waveforms
GS
I
Fig 16b. Gate Charge Waveform
AS
Vgs(th)
Qgs1 Qgs2
120
100
80
60
40
20
Vds
0
25
t
d(on)
Starting T J , Junction Temperature (°C)
t
r
Qgd
50
t p
75
Qgodr
t
d(off)
V
100
t
f
(BR)DSS
TOP
BOTTOM
Vgs
125
Id
7.9A
5.2A
12A
I D
5
150