SI7804DN-T1-E3 Vishay, SI7804DN-T1-E3 Datasheet

MOSFET N-CH 30V 6.5A 1212-8

SI7804DN-T1-E3

Manufacturer Part Number
SI7804DN-T1-E3
Description
MOSFET N-CH 30V 6.5A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7804DN-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.5 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0185 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
10A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
1.8V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7804DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7804DN-T1-E3
Manufacturer:
VISHAY
Quantity:
90
Part Number:
SI7804DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72317
S-83050-Rev. F, 29-Dec-08
Ordering Information: Si7804DN-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
8
(V)
3.30 mm
D
7
D
6
PowerPAK 1212-8
D
Si7804DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 30-V (D-S) Fast Switching MOSFET
5
Bottom View
0.0185 at V
0.030 at V
D
R
DS(on)
J
a
1
= 150 °C)
a
S
GS
GS
2
(Ω)
= 4.5 V
S
= 10 V
3
a
S
3.30 mm
4
G
a
b, c
A
= 25 °C, unless otherwise noted
I
D
10
Steady State
Steady State
8
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• 100 % R
• DC/DC Conversion
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
7.5
2.9
3.5
1.9
4.5
10
28
65
G
N-Channel MOSFET
- 55 to 150
± 20
260
30
40
15
11
Steady State
D
S
Maximum
6.5
5.0
1.2
1.5
0.8
6.0
35
81
Vishay Siliconix
Si7804DN
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7804DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7804DN-T1-E3 (Lead (Pb)-free) Si7804DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7804DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72317 S-83050-Rev. F, 29-Dec- °C J 0.8 1.0 1.2 Si7804DN Vishay Siliconix 1200 1000 C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.6 1.4 1 ...

Page 4

... Si7804DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 100 Limited DS(on 0 °C C Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72317. Document Number: 72317 S-83050-Rev. F, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7804DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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