IRFD020PBF Vishay, IRFD020PBF Datasheet

IRFD020PBF

Manufacturer Part Number

IRFD020PBF

Description

MOSFET N-CH 50V 2.4A 4-DIP

Manufacturer

Vishay

Series

HEXFET®r

Datasheets

1.IRFD020PBF.pdf (6 pages)

2.IRFD020PBF.pdf (6 pages)

3.IRFD020PBF.pdf (6 pages)

Specifications of IRFD020PBF

Transistor Polarity

N-Channel

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

100 mOhm @ 1.4A, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

2.4A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

24nC @ 10V

Input Capacitance (ciss) @ Vds

400pF @ 25V

Power - Max

Mounting Type

Through Hole

Package / Case

4-DIP (0.300", 7.62mm)

Configuration

Single

Resistance Drain-source Rds (on)

0.2 Ohms

Gate Charge Qg

11 nC

Drain-source Breakdown Voltage

60 V

Continuous Drain Current

1.7 A

Power Dissipation

1.3 W

Mounting Style

Through Hole

Continuous Drain Current Id

2.4A

Drain Source Voltage Vds

50V

On Resistance Rds(on)

100mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

*IRFD020PBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFD020PBF

Manufacturer:

SIL

Quantity:

5 759

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