IRF640LPBF Vishay, IRF640LPBF Datasheet - Page 5

• Manufacturer Part Number: IRF640LPBF
• Description: MOSFET N-CH 200V 18A TO-262
• Manufacturer: Vishay

Specifications of IRF640LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF640LPBF

Document Number: 91037
S-81241-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
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Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF640S, IRF640L, SiHF640S, SiHF640L
Fig. 12b - Unclamped Inductive Waveforms
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Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
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Duty factor ≤ 0.1 %
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Vishay Siliconix
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www.vishay.com
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