MOSFET N-CH 600V 3.6A D2PAK

IRFBC30SPBF

Manufacturer Part NumberIRFBC30SPBF
DescriptionMOSFET N-CH 600V 3.6A D2PAK
ManufacturerVishay
IRFBC30SPBF datasheet
 


Specifications of IRFBC30SPBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs2.2 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)600VCurrent - Continuous Drain (id) @ 25° C3.6A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs31nC @ 10V
Input Capacitance (ciss) @ Vds660pF @ 25VPower - Max3.1W
Mounting TypeSurface MountPackage / CaseD²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)2.2 Ohm @ 10 VDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current3.6 A
Power Dissipation3100 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTContinuous Drain Current Id3.6A
Drain Source Voltage Vds600VOn Resistance Rds(on)2.2ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFBC30SPBF
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (978Kb)Embed
Next
PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
2
2
I
PAK
(TO-262)
D
PAK (TO-263)
G
D
S
D
S
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
e
Continuous Drain Current
a, e
Pulsed Drain Current
Linear Derating Factor
b, e
Single Pulse Avalanche Energy
a
Avalanche Current
a
Repetiitive Avalanche Energy
Maximum Power Dissipation
c, e
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 41 mH, R
DD
J
 3.6 A, dI/dt  60 A/μs, V
 V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. Uses IRFBC30, SiHFBC30 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91111
S10-2433-Rev. B, 25-Oct-10
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
600
• Surface Mount (IRFBC30S, SiHFBC30S)
2.2
• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
31
• Available in Tape and Reel (IRFBC30S, SiHFBC30S)
• Dynamic dV/dt Rating
4.6
• 150 °C Operating Temperature
17
• Fast Switching
Single
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
G
2
The D
PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
S
2
D
PAK is suitable for high current applications because of
N-Channel MOSFET
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC30L, SiHFBC30L) is a available
for low-profile applications.
2
2
D
PAK (TO-263)
D
PAK (TO-263)
SiHFBC30S-GE3
SiHFBC30STRL-GE3
IRFBC30SPbF
IRFBC30STRLPbF
SiHFBC30S-E3
SiHFBC30STL-E3
IRFBC30S
-
SiHFBC30S
-
= 25 °C, unless otherwise noted)
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
A
T
= 25 °C
C
for 10 s
= 25 , I
= 3.6 A (see fig. 12).
g
AS
 150 °C.
J
Vishay Siliconix
device
design,
low
on-resistance
power
capability
and
the
lowest
2
I
PAK (TO-262)
a
SiHFBC30L-GE3
a
IRFBC30LPbF
a
SiHFBC30L-E3
IRFBC30L
SiHFBC30L
SYMBOL
LIMIT
600
V
DS
± 20
V
GS
3.6
I
D
2.3
14
I
DM
0.59
290
E
AS
3.6
I
AR
7.4
E
AR
3.1
P
D
74
dV/dt
3.0
- 55 to + 150
T
, T
J
stg
d
300
www.vishay.com
and
possible
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFBC30SPBF Summary of contents

  • Page 1

    ... N-Channel MOSFET its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L available for low-profile applications PAK (TO-263) D PAK (TO-263) SiHFBC30S-GE3 SiHFBC30STRL-GE3 IRFBC30SPbF IRFBC30STRLPbF SiHFBC30S-E3 SiHFBC30STL-E3 IRFBC30S - SiHFBC30S - = 25 °C, unless otherwise noted °C C ...

  • Page 2

    ... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). For recommended footprint and soldering techniques refer to application note #AN-994. SPECIFICATIONS ( °C, unless otherwise noted) ...

  • Page 3

    ... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91111 S10-2433-Rev. B, 25-Oct-10 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Fig Normalized On-Resistance vs. Temperature Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

  • Page 4

    ... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91111 S10-2433-Rev. B, 25-Oct-10 ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91111 S10-2433-Rev. B, 25-Oct-10 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L + Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

  • Page 6

    ... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91111 S10-2433-Rev ...

  • Page 7

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91111. Document Number: 91111 S10-2433-Rev ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...