2SK4097LS SANYO, 2SK4097LS Datasheet

2SK4097LS

Manufacturer Part Number

2SK4097LS

Description

MOSFET N-CH 500V 9.5A TO-220FI

Manufacturer

SANYO

Datasheet

1.2SK4097LS.pdf (5 pages)

Specifications of 2SK4097LS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

650 mOhm @ 5A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

9.5A

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

750pF @ 30V

Power - Max

Mounting Type

Through Hole

Package / Case

TO-220-3, TO-220FI(LS)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Vgs(th) (max) @ Id

Other names

869-1044

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Ordering number : ENA0775A

2SK4097LS

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

*1 Shows chip capability

*2 Package limited

*3 SANYO’s condition is radiation from backside.

*4 V DD =99V, L=5mH, I AV =9.5A

*5 L≤5mH, single pulse

Marking : K4097

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *4

Avalanche Current *5

•

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

Low ON-resistance, low input capacitance, ultrahigh-speed switching.

Adoption of high reliability HVP process.

Attachment workability is good by Mica-less package.

Avalanche resistance guarantee.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

I Dpack *2

Symbol

V GSS

V DSS

I Dc *1

E AS

Tstg

I DP

Tch

I AV

P D

SANYO Semiconductors

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Limited only by maximum temperature

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

PW≤10µs, duty cycle≤1%

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

2SK4097LS

O1007 TI IM TC-00000933 / 60607QB TI IM TC-00000726

Conditions

DATA SHEET

Ratings

--55 to +150

500

±30

150

280

9.5

8.3

2.0

9.5

No. A0775-1/5

Unit

°C

Related parts for 2SK4097LS

2SK4097LS Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK4097LS SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... V DS =200V =10V =9.5A Qgd V DS =200V =10V =9. =9.5A =0V 2.8 1 Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Avalanche Resistance Test Circuit V OUT 10V 0V 2SK4097LS Ratings Unit min typ max 500 V µ 100 A ±100 0.5 0.65 Ω 750 pF 150 102 5 0.9 1 ≥50Ω RG 2SK4097LS 50Ω No. A0775-2/5 ...

Page 3

... Gate-to-Source Voltage fs⏐ ⏐ 1 0.1 1.0 Drain Current Time -- 100 (on 0.1 1.0 Drain Current 2SK4097LS 30 Tc=25° =20V = IT12372 1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --50 --25 9.0 9.5 10.0 IT12374 =10V 0.01 ...

Page 4

... =200V =9 Total Gate Charge 2.5 2.0 1.5 1.0 0 100 Ambient Temperature ° 120 100 100 125 Ambient Temperature °C 2SK4097LS =38A (*1)=9. Dpack (*2)= Tc=25 ° Single pulse 0. 0.1 IT12380 120 140 160 0 IT12337 150 175 IT10478 ≤ 10 µ s Operation in this area is limited (on) ...

Page 5

... Note on usage : Since the 2SK4097LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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