IRFH7914TR2PBF International Rectifier, IRFH7914TR2PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRFH7914TR2PBF
Manufacturer Part Number
IRFH7914TR2PBF
Description
MOSFET N-CH 30V 15A PQFN56
Manufacturer
International Rectifier
Specifications of IRFH7914TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.7 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1160pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PQFN
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
13 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
35 A
Power Dissipation
3.1 W
Gate Charge Qg
8.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH7914TR2PBFTR
Available stocks
Part Number:
IRFH7914TR2PBF
Part Number:
IRFH7914TR2PBF
l
l
l
l
l
l
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www.irf.com
Applications
Benefits
Notes through
V
V
I
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
@ T
@ T
@ T
Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Very low R
Low Gate Charge
Fully Characterized Avalanche Voltage and
100% Tested for R
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
@T
@T
Current
A
A
C
A
A
= 25°C
= 70°C
= 25°C
= 25°C
= 70°C
DS(ON)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Case
Junction-to-Ambient
at 4.5V V
are on page 9
G
GS
Parameter
Parameter
f
g
g
g
g
GS
GS
GS
@ 10V
@ 10V
@ 10V
V
30V
DSS
Typ.
–––
–––
8.7m Ω @V
IRFH7914PbF
-55 to + 150
HEXFET
R
Max.
0.025
± 20
DS(on)
110
3.1
2.0
30
15
12
35
GS
Max.
max
®
D
D
7.2
40
D
Power MOSFET
D
= 10V 8.3nC
PQFN
Units
Units
W/°C
°C/W
07/15/08
°C
W
Qg
V
A
S
S
S
1
G
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IRFH7914TR2PBF Summary of contents
Applications Control MOSFET of Sync-Buck Converters l used for Notebook Processor Power Control MOSFET for Isolated DC-DC l Converters in Networking Systems Benefits Very low DS(ON) GS Low Gate Charge l Fully Characterized Avalanche Voltage ...
Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...
PULSE WIDTH Tj = 25°C 100 10 1 2.3V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...
0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...
Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE ...
125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V L V ...
D.U.T + • • - • + - • • • SD • Fig 16. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 17. Gate Charge ...
PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) IDENTIFIER Note: For the most current drawing please refer to IR website at http://www.irf.com/package XXXX XYWWX XXXXX PIN 1 LOT CODE ...
PQFN Tape and Reel Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 0.27mH Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by ...
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