IRLU3715PBF International Rectifier, IRLU3715PBF Datasheet - Page 6

MOSFET N-CH 20V 54A I-PAK

IRLU3715PBF

Manufacturer Part Number
IRLU3715PBF
Description
MOSFET N-CH 20V 54A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU3715PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1060pF @ 10V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
54A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
20 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
54 A
Power Dissipation
71 W
Mounting Style
SMD/SMT
Gate Charge Qg
11 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU3715PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU3715PBF
Manufacturer:
TI
Quantity:
5 354
IRLR/U3715PbF
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
R G
G
20V
V
V DS
GS
Q
t p
GS
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
(BR)DSS
15V
DRIVER
+
-
V DD
A
240
200
160
120
80
40
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
Vs. Drain Current
Same Type as D.U.T.
J
Current Regulator
.2µF
75
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
+
-
V
DS
°
8.5A
I D
15A
21A
175

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