IRLU8721PBF International Rectifier, IRLU8721PBF Datasheet

MOSFET N-CH 30V 65A I-PAK

IRLU8721PBF

Manufacturer Part Number
IRLU8721PBF
Description
MOSFET N-CH 30V 65A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU8721PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1030pF @ 15V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
65 A
Power Dissipation
65 W
Mounting Style
SMD/SMT
Gate Charge Qg
8.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
l
l
l
l
l
l
Benefits
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
θJA
and Current
@ T
@ T
for Telecom and Industrial Use
Converters with Synchronous Rectification
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Lead-Free
Very Low RDS(on) at 4.5V V
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
@T
@T
Converters for Computer Processor Power
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
are on page 11
Parameter
Parameter
GS
GS
GS
@ 10V
@ 10V
V
30V
Gate
G
DSS
Typ.
–––
–––
–––
IRLR8721PbF
D
-55 to + 175
HEXFET Power MOSFET
D-Pak
R
Max.
65
46
0.43
± 20
260
30
65
33
IRLR8721PbF
IRLU8721PbF
DS(on)
G
f
f
8.4m
Drain
S
D
Max.
110
2.3
50
IRLU8721PbF
max
I-Pak
Source
8.5nC
G
S
Units
Units
D
°C/W
W/°C
Qg
08/10/07
S
°C
W
V
A
1

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IRLU8721PBF Summary of contents

Page 1

... Gate @ 10V GS @ 10V GS Typ. ––– gà ––– ––– IRLR8721PbF IRLU8721PbF HEXFET Power MOSFET R max Qg DS(on) 8.4m 8.5nC D-Pak I-Pak IRLU8721PbF D S Drain Source Max. Units 30 V ± 260 0.43 W/°C - 175 °C Max. Units 2.3 50 ° ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

VGS TOP 10V 8.0V 5.0V 4.5V 100 4.0V 3.5V 3.0V BOTTOM 2. 2.7V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 10 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF V ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Id Vgs www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com ,5)5 $   ,5)5   9 ...

Page 10

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 ,5)8 $   ,5)8   www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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