IRLU3303PBF International Rectifier, IRLU3303PBF Datasheet - Page 3

• Manufacturer Part Number: IRLU3303PBF
• Description: MOSFET N-CH 30V 35A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3303PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 33 A
• Power Dissipation: 57 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3303PBF

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1000
1000
100
Fig 3. Typical Transfer Characteristics
100
0.1
Fig 1. Typical Output Characteristics
10
0.1
10
1
1
0.1
2
TOP
BOTTOM 2.5V
3
V
V
T = 25°C
GS
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
J
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
5
T = 175°C
2.5V
J
6
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 15V
10
8
9
100
10
A
A
1000
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
0.1
10
1
Fig 4. Normalized On-Resistance
-60 -40 -20
0.1
I
TOP
BOTTOM 2.5V
D
= 34A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
Vs. Temperature
0
, Drain-to-Source Voltage (V)
20
1
40
2.5V
60
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
3
100
A
A