IXTP90N055T2 IXYS, IXTP90N055T2 Datasheet

MOSFET N-CH 55V 90A TO-220

IXTP90N055T2

Manufacturer Part Number
IXTP90N055T2
Description
MOSFET N-CH 55V 90A TO-220
Manufacturer
IXYS
Series
TrenchT2™r
Datasheet

Specifications of IXTP90N055T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
2770pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0084 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.0084
Ciss, Typ, (pf)
2770
Qg, Typ, (nc)
42
Trr, Typ, (ns)
37
Trr, Max, (ns)
-
Pd, (w)
150
Rthjc, Max, (k/w)
1.0
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
D
D
D
= 250μA
= 250μA
= 25A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTA90N055T2
IXTP90N055T2
-55 ... +175
-55 ... +175
Min.
2.0
55
Maximum Ratings
1.13 / 10
Characteristic Values
± 20
230
300
150
175
300
260
2.5
3.0
Typ.
55
55
90
75
50
7.0
±200
Nm/lb.in.
Max.
200 μA
4.0
8.4 mΩ
2 μA
mJ
°C
°C
°C
°C
°C
nA
W
V
V
V
A
A
A
A
V
V
g
g
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
Technology for extremely low R
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
175°C Operating Temperature
High current handling capability
Automotive Engine Control
Synchronous Buck Converter
(for notebook systempower & General
purpose point & load.)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture
ROHS Compliant
High performance Trench
Easy to mount
Space savings
High power density
Synchronous
DS(on)
DSS
G
D
G
S
= 55V
= 90A
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
8.4mΩ Ω Ω Ω Ω
(TAB)
(TAB)
DS99956A(3/08)
DS(on)

Related parts for IXTP90N055T2

IXTP90N055T2 Summary of contents

Page 1

... ± 20V GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA90N055T2 IXTP90N055T2 Maximum Ratings 55 = 1MΩ ± 230 JM 50 300 150 -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 Characteristic Values Min. Typ 150° ...

Page 2

... DSS D 8.5 0.50 Characteristic Values Min. Typ. JM 0.85 37 2.2 40 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA90N055T2 IXTP90N055T2 TO-263 (IXTA) Outline Max 1.00 °C/W °C/W Max 360 A TO-220 (IXTP) Outline 1 Pins Gate ...

Page 3

... Value 175º 25º 180 210 240 270 300 -50 IXTA90N055T2 IXTP90N055T2 Fig. 2. Extended Output Characteristics @ 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 90A D - 100 T - Degrees Centigrade J Fig ...

Page 4

... MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 5.5 6.0 6.5 7 25ºC J 1.0 1.1 1.2 1.3 1.4 1.5 1,000 C iss 100 C oss C rss IXTA90N055T2 IXTP90N055T2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 30V 25A D 8 ...

Page 5

... Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 22 d(off) 21 Ω 10V 30V 21.0 DS 20.5 20.0 19 45A D 19.0 18.5 18 Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 25A V = 30V Ohms G IXTA90N055T2 IXTP90N055T2 = 25º 25A 105 115 125 45A ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTA90N055T2 IXTP90N055T2 0.1 1 IXYS REF: T_90N055T2(V2)03-06-08-A 10 ...

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