IRLU3717PBF International Rectifier, IRLU3717PBF Datasheet - Page 7

• Manufacturer Part Number: IRLU3717PBF
• Description: MOSFET N-CH 20V 120A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3717PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2830pF @ 10V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.7 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 21 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3717PBF

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-
D.U.T
Fig 15.
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+
-
•
•
•
•
SD
•
•
•
Vgs(th)
Qgs1 Qgs2
Vds
Fig 16. Gate Charge Waveform
-
„
G
HEXFET
+
V
Qgd
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgodr
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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