IXTA120N04T2 IXYS, IXTA120N04T2 Datasheet

MOSFET N-CH 40V 120A TO-263

IXTA120N04T2

Manufacturer Part Number
IXTA120N04T2
Description
MOSFET N-CH 40V 120A TO-263
Manufacturer
IXYS
Series
TrenchT2™r
Datasheet

Specifications of IXTA120N04T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.1 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
3240pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0061 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
40
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.0061
Ciss, Typ, (pf)
3240
Qg, Typ, (nc)
58
Trr, Typ, (ns)
35
Pd, (w)
200
Rthjc, Max, (k/w)
0.75
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
DSS
DGR
GSM
AS
D
J
JM
stg
L
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
D
D
D
= 250μA
= 250μA
= 25A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTA120N04T2
IXTP120N04T2
-55 ... +175
-55 ... +175
Min.
2.0
40
Maximum Ratings
1.13 / 10
Characteristic Values
± 20
120
360
400
200
175
300
260
2.5
3.0
Typ.
40
40
50
±100
Nm/lb.in.
Max.
4.0
6.1 mΩ
50 μA
2 μA
mJ
°C
°C
°C
°C
°C
nA
W
V
V
A
A
A
V
V
V
g
g
V
I
R
TO-263
TO-220
G = Gate
S = Source
Features
Advantages
Applications
D25
International standard packages
Avalanche rated
Low package inductance
175°C Operating Temperature
High current handling capability
Synchronous Buck Converters
High Current Switching Power
Battery Powered Electric Motors
Resonant-mode power supplies
Electronics Ballast Application
Class D Audio Amplifiers
Supplies
Low R
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
DS(on)
S
= 40V
= 120A
≤ ≤ ≤ ≤ ≤
S
D
TAB = Drain
6.1mΩ Ω Ω Ω Ω
= Drain
(TAB)
(TAB)
DS99973A(11/08)

Related parts for IXTA120N04T2

IXTA120N04T2 Summary of contents

Page 1

... ± 20V GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA120N04T2 IXTP120N04T2 Maximum Ratings 40 = 1MΩ ± 20 120 360 JM 50 400 200 -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 Characteristic Values Min. Typ 150° ...

Page 2

... I 17 DSS D D25 10 0.50 Characteristic Values Min. Typ 1.6 28 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA120N04T2 IXTP120N04T2 TO-263 (IXTA) Outline Max 0.75 °C/W °C/W Max. 120 A 480 A TO-220 (IXTP) Outline 1 ...

Page 3

... Value D 130 120 110 T = 175ºC J 100 T = 25ºC J 150 180 210 240 270 IXTA120N04T2 IXTP120N04T2 Fig. 2. Extended Output Characteristics @ 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V ...

Page 4

... MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 5.0 5.5 6.0 6 25ºC J 1.0 1.1 1.2 1.3 1.4 1.5 1000 C iss 100 C oss C rss IXTA120N04T2 IXTP120N04T2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 20V 60A 10mA G ...

Page 5

... 20V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 5Ω 10V 20V 60A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 20V 60A 120A Ohms G IXTA120N04T2 IXTP120N04T2 100 120A 105 115 125 ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTA120N04T2 IXTP120N04T2 0.1 1 IXYS REF: T_120N04T2(V3)12-15-08-A 10 ...

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