IRF9204PBF International Rectifier, IRF9204PBF Datasheet

MOSFET P-CH 40V 74A TO-220AB

IRF9204PBF

Manufacturer Part Number
IRF9204PBF
Description
MOSFET P-CH 40V 74A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9204PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
3V @ 100µA
Gate Charge (qg) @ Vgs
224nC @ 10V
Input Capacitance (ciss) @ Vds
7676pF @ 25V
Power - Max
143W
Mounting Type
Surface Mount
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
P Channel
Continuous Drain Current Id
-74A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
23 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 74 A
Power Dissipation
143 W
Mounting Style
Through Hole
Gate Charge Qg
149 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9204PBF
Manufacturer:
RENESAS
Quantity:
6 000
Description
Features
This HEXFET
www.irf.com
l
l
l
l
l
l
l
l
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
@ T
@ T
@ T
@T
(Tested )
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
Power MOSFET
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Ã
i
Parameter
Parameter
GS
GS
GS
g
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
d
i
i
h
G
G a te
G
IRF9204PbF
See Fig.17a, 17b, 14, 15
300 (1.6mm from case )
D
S
D
Typ.
HEXFET
0.50
–––
–––
IRF9204PbF
10 lbf
TO-220AB
D r a in
-55 to + 175
D
y
Max.
in (1.1N
-300
0.95
143
± 20
270
502
-74
-53
-56
R
G
DS(on)
D
®
V
S
DSS
I
Power MOSFET
D
y
Max.
= -74A
m)
1.05
–––
62
= -40V
= 16mΩ
S o u r c e
PD - 96277A
S
07/28/10
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF9204PBF Summary of contents

Page 1

... Bond Limited à Parameter 96277A IRF9204PbF ® HEXFET Power MOSFET -40V DSS R = 16mΩ DS(on -74A TO-220AB IRF9204PbF Max. Units -74 -53 A -56 -300 143 W 0.95 W/°C ± 270 mJ 502 See Fig.17a, 17b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH VGS Tj = 25°C TOP -15V -10V -4.5V -4.0V 100 -3.5V -3.0V -2.8V BOTTOM -2. -2.5V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

0V KHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Starting Junction Temperature (°C) Fig 12. Maximum Avalanche Energy Vs. Drain Current 1000 Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 Allowed avalanche ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16 D.U 20V V GS 0.01 Ω Fig 17a. Unclamped Inductive Test Circuit Current ...

Page 7

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 SEMBLY LINE "C" Note: "P" embly line position indicates "Lead - Free" TO-220AB packages are not recommended ...

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