IXTP80N10T IXYS, IXTP80N10T Datasheet

MOSFET N-CH 100V 80A TO-220

IXTP80N10T

Manufacturer Part Number
IXTP80N10T
Description
MOSFET N-CH 100V 80A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP80N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3040pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.014
Ciss, Typ, (pf)
3040
Qg, Typ, (nc)
60
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTP80N10T
Quantity:
2 250
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
dV/dt
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-263
TO-220
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 0V, I
= V
= ± 20V, V
= 105V, V
= 10V, I
TM
DM
GS
, V
, I
DD
D
D
D
= 250μA
≤ V
= 100μA
= 25A, Note 1 & 2
DS
GS
DSS
= 0V
= 0V
, T
J
GS
≤ 175°C
= 1MΩ
T
J
= 150°C
JM
IXTA80N10T
IXTP80N10T
Min.
105
Characteristic Values
2.5
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10
± 20
± 30
Typ.
100
100
220
400
230
175
300
260
2.5
3.0
80
25
10
± 200
Nm/lb.in.
Max.
150
5.0
14 mΩ
5
V/ns
mJ
μA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Diode
International Standard Packages
175°C Operating Temperature
Avalanche Rated
High Current Handling Capability
- DC/DC Conversion
Low R
Easy to Mount
Space Savings
High Power Density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
High Current Switching Applications
Distributed Power Architechtures
Electronic Valve Train Systems
DS(on)
Systems
DSS
and VRMs
DS(on)
G
D S
≤ ≤ ≤ ≤ ≤
=
=
G
D
Tab = Drain
S
14mΩ Ω Ω Ω Ω
100V
80A
= Drain
D (Tab)
D (Tab)
DS99648A(11/09)

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IXTP80N10T Summary of contents

Page 1

... ± 20V GSS 105V DSS 10V 25A, Note 1 & 2 DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTA80N10T IXTP80N10T Maximum Ratings 100 = 1MΩ 100 GS ± 20 ± 220 JM 25 400 230 ≤ 175° -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 Characteristic Values Min ...

Page 2

... A 220 A 1 Pins Gate 3 - Source 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTA80N10T IXTP80N10T 1. Gate 2. Drain 3. Source Inches Max. Min. Max. 4.83 .160 .190 0.99 .020 .039 1.40 .045 .055 0.74 .016 .029 1.40 .045 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature 2 10V GS 2.4 2 80A D 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTA80N10T IXTP80N10T = 25º 40A Value vs 40A D 100 125 150 175 100 125 150 175 ...

Page 4

... C iss 0.10 C oss C rss 0. Fig. 8. Transconductance 40º Amperes D Fig. 10. Gate Charge 50V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTA80N10T IXTP80N10T 25ºC 150ºC 100 120 140 160 ...

Page 5

... 15Ω 10V 50V 30A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 50V 10A 30A Ohms G IXTA80N10T IXTP80N10T = 25º 125º 10A 105 115 125 270 230 190 150 110 IXYS REF: T_80N10T(3V)12-11-07-A ...

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