IXTA180N085T IXYS, IXTA180N085T Datasheet - Page 5

• Manufacturer Part Number: IXTA180N085T
• Description: MOSFET N-CH 85V 180A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA180N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 430W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 180 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): 63
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
140
120
100
72
68
64
60
56
52
48
44
80
60
40
20
80
70
60
50
40
30
20
0
24
4
25
t
R
V
t
T
V
f
G
DS
r
J
DS
Switching Times vs. Gate Resistance
I
= 125ºC, V
= 5 Ω , V
Switching Times vs. Drain Current
D
35
= 43V
6
= 43V
28
= 25A
Rise Time vs. Junction Temperature
Fig. 17. Resistive Turn-off
t
Fig. 15. Resistive Turn-on
45
d(off)
t
GS
d(on)
8
Fig. 13. Resistive Turn-on
GS
= 10V
32
- - - -
I
- - - -
D
T
= 10V
I
55
D
= 50A
10
R
J
- Amperes
- Degrees Centigrade
G
- Ohms
36
65
12
75
I
40
D
14
= 50A
85
16
T
T
T
T
44
J
J
J
J
95
= 125ºC
= 25ºC
= 25ºC
= 125ºC
I
R
V
V
D
G
GS
DS
18
= 25A
105
= 5 Ω
48
= 43V
= 10V
20
115
60
56
52
48
44
40
36
32
100
92
84
76
68
60
52
44
125
160
140
120
100
68
66
64
62
60
58
56
54
52
50
48
46
80
60
40
90
80
70
60
50
40
30
20
25
24
4
Switching Times vs. Junction Temperature
I
D
t
T
V
t
R
V
Switching Times vs. Gate Resistance
f
f
J
= 25A, 50A
DS
26
G
DS
35
R
V
V
= 125ºC, V
= 5 Ω , V
G
GS
DS
6
= 43V
= 43V
= 5 Ω
28
= 10V
= 43V
I
45
D
Fig. 18. Resistive Turn-off
I
Fig. 16. Resistive Turn-off
= 25A
D
t
T
t
d(off)
GS
d(off)
8
30
= 50A
Rise Time vs. Drain Current
J
Fig. 14. Resistive Turn-on
GS
- Degrees Centigrade
55
= 10V
- - - -
- - - -
= 10V
32
10
R
65
G
I
D
34
- Ohms
- Amperes
12
75
36
I
D
85
38
14
= 25A
IXTP180N085T
IXYS REF: T_180N085T (5V) 6-13-06.xls
IXTA180N085T
40
T
95
T
J
J
16
= 25ºC
= 125ºC
42
105
I
D
18
44
= 50A
115
46
20
125
300
260
220
180
140
100
60
48
94
90
86
82
78
74
70
66
62
58
54
50
50