IXTQ10P50P IXYS, IXTQ10P50P Datasheet - Page 6

• Manufacturer Part Number: IXTQ10P50P
• Description: MOSFET P-CH 500V 10A TO-3P
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTQ10P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: - 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -500
• Id(cont), Tc=25°c, (a): -10
• Rds(on), Max, Tj=25°c, (?): 1
• Ciss, Typ, (pf): 2670
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 414
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.00
0.10
0.01
0.0001
0.001
Fig. 13. Maximum Transient Thermal Impedance
0.01
Pulse Width - Seconds
0.1
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
1
IXYS REF: T_10P50P(B5)5-21-08-B
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