IRLL3303 International Rectifier, IRLL3303 Datasheet
IRLL3303
Specifications of IRLL3303
Available stocks
Related parts for IRLL3303
IRLL3303 Summary of contents
Page 1
... When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com HEXFET This - 10V 10V 10V 150 Typ PD- 91379C IRLL3303 ® Power MOSFET V = 30V DSS R = 0.031 DS(on 4.6A D Max. Units 6.5 4.6 A 3 ...
Page 2
... IRLL3303 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
Page 3
... Fig 3. Typical Transfer Characteristics www.irf.com TOP BOTTOM 3. . 0.1 Fig 2. Typical Output Characteristics 2 .6A D 1.5 1.0 0 0.0 A -60 -40 5.0 5.5 Fig 4. Normalized On-Resistance IRLL3303 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3 .0V 2 0µ 0° rain-to-S ource V oltage ( - Junction T em perature (° ...
Page 4
... IRLL3303 iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0° 5° 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs ing lse 1.2 1.4 0.1 Fig 8. Maximum Safe Operating Area ...
Page 5
... Fig 9b. Gate Charge Test Circuit . Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms 0 cta lse tio n ( IRLL3303 D.U. µ d(off fac ...
Page 6
... IRLL3303 . Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms tarting unc tion T em perature (° Fig 12c. Maximum Avalanche Energy 2 TTO Vs. Drain Current www.irf.com ...
Page 7
... Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple for Logic Level Devices Fig 13. For N-Channel HEXFETS IRLL3303 + + P.W. Period V =10V * ...
Page 8
... IRLL3303 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO www.irf.com ...
Page 9
... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com (. (. (. (. (. (. (. (. (. (. 5.40 (. 1. CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. 1/99 IRLL3303 (. (. (. (. (. (. (. (. 0 (. ...