IXTF280N055T IXYS, IXTF280N055T Datasheet
IXTF280N055T
Manufacturer Part Number
IXTF280N055T
Description
MOSFET N-CH 55V 160A ISOPLUS I4
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTF280N055T.pdf
(2 pages)
Specifications of IXTF280N055T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9800pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Configuration
Single Dual Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
160 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0040
Ciss, Typ, (pf)
9800
Qg, Typ, (nc)
200
Trr, Typ, (ns)
40
Trr, Max, (ns)
-
Pd, (w)
200
Rthjc, Max, (k/w)
0.75
Package Style
ISOPLUS i4-Pak
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION All rights reserved
DM
D25
L
AR
GSS
DSS
C
J
JM
stg
L
SOLD
DGR
GSM
AS
D
ISOL
GS(th)
DSS
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Package Current Limit, RMS (75 A per lead)
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I
Mounting force
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
GS
GS
J
J
J
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/ms, V
GS
TM
DSS
, I
D
D
= 250 μA
= 250 μA
D
= 50 A, Notes 1, 2
G
DS
= 3.3 Ω
= 0 V
GS
ISOL
Advance Technical Information
= 1 MΩ
DD
< 1 mA, RMS 2500
T
≤ V
J
= 150°C
IXTF280N055T
DSS
JM
Min.
20..120/4.5..25
2.0
55
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
± 20
160
150
600
200
175
300
260
1.5
55
55
40
3
V
6
± 200 nA
Max.
250 μA
4.0
4.0 m Ω
5 μA
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
g
V
V
J
Features
Advantages
Applications
ISOPLUS i4-Pak
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
Primary- Side Switch
DC/DC Converters and Off-line UPS
High Current Switching
V
I
R
Applications
G = Gate
S = Source
D25
DSS
DS(on)
G
S
S
=
= 160
≤ ≤ ≤ ≤ ≤
D
TM
D
(5-lead) (IXTF)
D = Drain
4.0 mΩ Ω Ω Ω Ω
55
DS99686 (01/07)
A
V
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IXTF280N055T Summary of contents
Page 1
... ± GSS DSS DS DSS Notes 1, 2 DS(on © 2007 IXYS CORPORATION All rights reserved Advance Technical Information IXTF280N055T Maximum Ratings MΩ ± 20 160 150 600 JM 40 1.5 ≤ DSS 200 -55 ... +175 175 -55 ... +175 300 260 < 1 mA, RMS 2500 ISOL 20..120/4.5..25 Characteristic Values Min ...
Page 2
... DSS D 50 0.15 Characteristic Values T = 25°C unless otherwise specified) J Min. Typ 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTF280N055T ISOPLUS i4-Pak TM (5-Lead) (IXTF) Outline Max 0.75 °C/W °C/W Max. 150 A 600 A 1 All leads and tab are tin plated. ...