IXTF250N075T IXYS, IXTF250N075T Datasheet - Page 2

• Manufacturer Part Number: IXTF250N075T
• Description: MOSFET N-CH 75V 140A ISOPLUS I4
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTF250N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Configuration: Single Dual Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0044 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 140 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 140
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 50
• Trr, Max, (ns): -
• Pd, (w): 200
• Rthjc, Max, (k/w): 0.75
• Package Style: ISOPLUS i4-Pak™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Notes: 1.
SM
d(on)
d(off)
S
r
f
IXYS MOSFETs and IGBTs are covered by
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
one or moreof the following U.S. patents:
fs
iss
oss
rss
thJC
thCH
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
Pulse test: t
Test Conditions
V
V
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 50 A, V
= 25 A, -di/dt = 100 A/ s
= 25 V, V
= 3.3 W (External)
= 10 V; I
= 10 V, V
= 0 V
= 0 V, V
= 10 V, V
ADVANCE TECHNICAL INFORMATION
GS
300 s, duty cycled
D
DS
GS
DS
DS
= 60 A, Note 1
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
, I
4,931,844
5,017,508
5,034,796
D
D
= 25 A
= 50 A
(T
T
J
J
= 25°C unless otherwise specified)
2 %;
= 25°C unless otherwise specified)
5,049,961
5,063,307
5,187,117
Characteristic Values
Characteristic Values
Min.
Min.
5,237,481
5,381,025
5,486,715
75
9900
1330
0.15
Typ.
Typ.
122
285
200
32
50
58
45
50
60
50
6,162,665
6,259,123 B1
6,306,728 B1
0.75 °C/W
Max.
Max.
150
560
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
ISOPLUS i4-Pak
(IXTF) Outline
6,683,344
6,710,405B2
6,710,463
All leads and tab are tin plated.
IXTF250N075T
6,727,585
6,759,692
6771478 B2
TM
(5-Lead)
7,005,734 B2
7,063,975 B2
7,071,537
Leads:
Source;
1. Gate;
2, 3.
4, 5. Drain
6. Isolated.