IXTR40P50P IXYS, IXTR40P50P Datasheet

MOSFET P-CH 500V 22A ISOPLUS247

IXTR40P50P

Manufacturer Part Number
IXTR40P50P
Description
MOSFET P-CH 500V 22A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR40P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-22.0
Rds(on), Max, Tj=25°c, (?)
0.260
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
205
Trr, Typ, (ns)
477
Pd, (w)
312
Rthjc, Max, (k/w)
0.40
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 H
I
Mounting Force
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
< 1mA t = 1s
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
Z
GS
, V
DSS
,RMS, t= 1min
, I
DD
D
, V
D
= - 250μA
D
≤ V
= -1mA
GS
DS
= - 20A, Note 1
= 0V
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
JM
IXTR40P50P
20..120/4.5..27
- 500
- 2.0
Min.
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
- 500
- 500
2500
3000
-120
- 22
- 40
±20
±30
312
150
300
260
Typ.
3.5
10
5
- 250 μA
±100 nA
Max.
- 4.0
- 50 μA
260 mΩ
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
V
V
g
J
Features
Advantages
Applications
V
I
R
ISOPLUS247
G = Gate
S = Source
D25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Diode
The Rugged PolarP
Low Q
Low Drain-to-Tab Capacitance
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
D = Drain
- 500V
- 22A
260mΩ Ω Ω Ω Ω
TM
Isolated Tab
Process
DS99937B(03/09)

Related parts for IXTR40P50P

IXTR40P50P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 20A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTR40P50P Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ± -120 3.5 ≤ 150° 312 -55 ... +150 150 -55 ... +150 300 260 2500 3000 20..120/4.5..27 5 Characteristic Values Min. ...

Page 2

... DSS 205 , 20A 55 DSS D 75 0.15 Characteristic Values Min. Typ. JM 477 14 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR40P50P Max. ISOPLUS247 (IXTR) Outline 0.40 °C/W °C/W Max 160 μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 ...

Page 3

... D -24 -22 - 125ºC J -18 -16 -14 -12 - 25ºC J -50 -60 -70 -80 -90 IXTR40P50P Fig. 2. Extended Output Characteristics @ 25º -10V -12 -16 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 40A D -50 - Degrees Centigrade ...

Page 4

... V - Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC -5.5 -6.0 -6 25ºC J -2.5 -3.0 -3.5 -4.0 - 1,000.0 C iss - 100.0 C oss - 10 rss - -25 -30 -35 -40 IXTR40P50P Fig. 8. Transconductance -10 -15 -20 -25 -30 -35 - Amperes D Fig. 10. Gate Charge - 250V 20A ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR40P50P 0.1 1 IXYS REF: T_40P50P(B9) 03-06-08-A 10 ...

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