IXTK60N50L2 IXYS, IXTK60N50L2 Datasheet

MOSFET N-CH 60A 500V TO-264

IXTK60N50L2

Manufacturer Part Number
IXTK60N50L2
Description
MOSFET N-CH 60A 500V TO-264
Manufacturer
IXYS
Series
Linear L2™r
Datasheet

Specifications of IXTK60N50L2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
610nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
TO-264
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
610
Trr, Typ, (ns)
980
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
LinearL2
MOSFET w/Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
A
GSS
DSS
© 2008 IXYS CORPORATION, All rights reserved
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
Power
GS
DSS
, I
D
D
D
= 1mA
= 250μA
= 0.5 • I
DS
= 0V
D25
GS
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTK60N50L2
IXTX60N50L2
20..120 / 4.5..27
500
2.5
Min.
-55...+150
-55...+150
Maximum Ratings
Characteristic Values
1.13/10
500
500
±30
±40
150
960
150
300
260
Typ.
60
60
10
3
6
±200
Max.
100 mΩ
4.5
Nm/lb.in.
50
5 mA
N/lb.
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264
PLUS247
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for linear operation
International standard packages
Avalanche rated
Guaranteed FBSOA at 75°C
Solid state circuit breakers
Soft start controls
Linear amplifiers
Programmable loads
Current regulators
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G
D
S
D
S
= 60A
< 100mΩ Ω Ω Ω Ω
= 500V
D
TAB = Drain
= Drain
DS100087(12/08)
(TAB)
(TAB)

Related parts for IXTK60N50L2

IXTK60N50L2 Summary of contents

Page 1

... D = ±30V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTK60N50L2 IXTX60N50L2 Maximum Ratings 500 = 1MΩ 500 GS ±30 ±40 60 150 960 -55...+150 150 -55...+150 300 260 1.13/10 20..120 / 4.5.. Characteristic Values Min. Typ. ...

Page 2

... Characteristic Values Min. Typ. = 75° 440 C Characteristic Values Min. Typ. JM 980 73 35.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK60N50L2 IXTX60N50L2 TO-264 (IXTK) Outline Max 0.13 °C/W °C/W Max. W PLUS 247 (IXTX) Outline TM Max ...

Page 3

... V = 20V GS 14V 12V 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 5 0 -50 - Degrees Centigrade C IXTK60N50L2 IXTX60N50L2 30A Value D = 60A I = 30A D 75 100 125 150 75 100 125 150 IXYS REF: T_60N50L2(9R)12-08-08-B ...

Page 4

... C rss 0.001 Fig. 8. Transconductance 40º 25ºC 35 125º Amperes D Fig. 10. Gate Charge 250V 30A 10mA 100 200 300 400 500 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTK60N50L2 IXTX60N50L2 100 110 600 700 800 900 0 ...

Page 5

... Fig. 14. Forward-Bias Safe Operating Area 1,000.0 R Limit DS(on) 100.0 25µs 100µs 1ms 10.0 10ms 100ms DC 1 150º 75ºC C Single Pulse 0.1 1000 10 IXTK60N50L2 IXTX60N50L2 @ T = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 100 1000 V - Volts DS IXYS REF: T_60N50L2(9R)12-08-08-B ...

Related keywords