ZVP4525GTA Diodes Zetex, ZVP4525GTA Datasheet - Page 4

• Manufacturer Part Number: ZVP4525GTA
• Description: MOSFET P-CH 250V 265MA SOT223
• Manufacturer: Diodes Zetex

Specifications of ZVP4525GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 265mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 3.45nC @ 10V
• Input Capacitance (ciss) @ Vds: 73pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZVP4525GTR

ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZVP4525G
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(3)
(1)
(3)
(3)
(1)
amb
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
4
-250
-0.8
80
TYP.
-285
-30
±1
-1.5
10
13
200
73
12.8
3.91
1.53
3.78
17.5
7.85
2.45
0.22
0.45
205
21
MAX. UNIT CONDITIONS
-500
±100
-2.0
14
18
3.45
0.31
0.63
0.97
290
29
V
nA
nA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
I
V
I
V
V
I
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
test circuit)
T
V
T
di/dt= 100A/µs
D
V
D
D
D
DS
GS
GS
DS
DS
DD
G
DS
j
GS
j
=-200mA(refer to
=25°C, I
=25°C, I
=-1mA, V
=-1mA, V
=-100mA
GS
=50Ω, V
ISSUE 4 - JUNE 2004
=-250V, V
=-10V,I
=-25 V, V
=-25V,V
=-10V, I
=-3.5V,
=0V
=±40V, V
=-30V, I
S
F
GS
=-200mA,
D
=-200mA,
GS
DS
D
GS
=-0.15A
D
=-200mA
GS
=-10V
GS
DS
=-200mA
=0V
= V
=-10V,
=0V,
=0V
=0V
GS